A Study On Isolation Performance Of Pin Diode With Defected Ground Structure (DGS) For RF Switch

Chan, Siew Yien (2011) A Study On Isolation Performance Of Pin Diode With Defected Ground Structure (DGS) For RF Switch. Project Report. UTeM, Melaka, Malaysia. (Submitted)

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Abstract

This project aims to study the performance of isolation with DGS under PIN Diode for SPST switch design. This project involves with the studies of the background of Defected Ground Structure (DGS), PIN diode and the isolation issue in RF switch. There has been an isolation issue occurs in RF switch. The PIN diode with parasitic capacitance is causing degradation of isolation performance in RF switch and DGS (Defected Ground Structure) has a potential to remove the parasitic capacitance. Nowadays, there has been an increasing interest in studying microstrip lines that prohibit wave propagation in certain frequency bands using defected ground structure (DGS). DGS is implemented by modifying guided wave where it changes the propagation characteristic. DGS is realized by etching only a few areas on the ground plane under the microstrip line. Advanced Design Software (ADS) software will be used for PIN Diode and DGS circuit and layout modeling and then will be fabricated on the FR4 board. Once the prototype has been finish, the measurement parameter will be tested which then measured the isolation performance.

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