Design And Characterization Of Silicon-On-Insulator (SOI) Metal - Oxide- Semiconductor Field Effect Transistor (MOSFET)

Nurasma Ansari, Mohd Naim (2011) Design And Characterization Of Silicon-On-Insulator (SOI) Metal - Oxide- Semiconductor Field Effect Transistor (MOSFET). Project Report. UTeM, Melaka, Malaysia. (Submitted)

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Abstract

The design of low cost Silicon – On – Insulator (SOI) MOSFET technology has brought about a need to develop specific characterization techniques. This project mainly focus on creating an initial SOI MOSFET device design, characterization and simulations of SOI devices and technology. SOI MOSFET has specific effects and characteristics which make SOI MOSFET different from conventional MOSFET such as NMOS. It can be obtained by using three simulation methods which are DEVEDIT, ATHENA and ATLAS from Silvaco TCAD simulation tools. For conventional MOSFET, there are a few problems in device performance such as switching which came from higher leakage current (IOFF), high power and low speed characteristic. To achieve the ultimate goal of SOI device and circuit design, its performance has to optimize while minimizing undesirable effects. From the analysis, SOI MOSFET shows good electrical characteristic when reducing the thickness of silicon and shrinking the channel length to 40 nm

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