Design and analysis of 18nm Graphene-HfO2-WSix

Magenthiran, Harivinthaan (2021) Design and analysis of 18nm Graphene-HfO2-WSix. Project Report. Universiti Teknikal Malaysia Melaka, Melaka, Malaysia. (Submitted)

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Abstract

A bilayer-graphene in a planar structure was enhanced and analysed on an 18 nm NMOS device to obtain an optimum value for the performance parameters. The device is made of a high-k material called Hafnium Dioxide (HfO2) and a metal gate called as Tungsten Silicide (WSix). The Silvaco software which consist of ATHENA and ATLAS modules were used to simulate the fabrication process of virtual devices and analyses their electrical properties. The Taguchi L9 orthogonal array method was then used to improve the system process parameters threshold voltage (VTH) and minimum leakage current (ILEAK), which are 0.540 V ± 12.7% for VTH and 20 nA/m for ILEAK according to the International Technology Roadmap Semiconductor (ITRS 2013) specification. The most important factor for the VTH optimization were signal to noise ratio (SNR) of nominal the better (NTB) an ILEAK will be evaluated by the percentage influencing the process parameter. Hence, the optimized result of VTH, 0.549704 V which is 1.8% nearer to the ITRS 2013 target while holding ILEAK value of 5.31801nA/ μm which is lower than the predicted value and it shows that the system has an excellent device efficiency when the parameters are set appropriately.

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