Design and analysis of 18NM Graphene-TiO2-TiSix NMOS device using Taguchi Method

Ahmad Fairuz, Muhammad Fawwaz Aqil (2022) Design and analysis of 18NM Graphene-TiO2-TiSix NMOS device using Taguchi Method. Project Report. Universiti Teknikal Malaysia Melaka, Melaka, Malaysia. (Submitted)

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Abstract

Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been steady growth in high-speed switching applications in the semiconductor industry. As shrinking of the transistor size will enable a greater number of transistors to be placed in a chip. However, the conventional combination of regular Silicon Dioxide (SiO2) and Polysilicon will be replaced with high-k materials which is Titanium Dioxide (TiO2) as metal gate and Titanium Silicide (TiSix) as a gate dielectric. The main objectives of this project are to reduce the leakage current (IOFF) and to obtain optimum threshold voltage (VTH) for the NMOS device. The designed NMOS device are implemented using Silvaco software with ATHENA tool as a virtual fabrication process and ATLAS tool as an analyzing process for the device's electric properties. The results will be analyzed using Taguchi L9 orthogonal array method to obtain nominal values of threshold voltage and leakage current. The initial results before optimizing with the Taguchi Method are 0.500061 V for VTH and 13.2042 pA/μm for IOFF. Once the device is optimized with Taguchi Method, the optimum value for VTH is 0.540576 V and 12.9181 pA/μm for IOFF. These values are met with the targeted values based on International Technology Roadmap for Semiconductors (ITRS) 2013.

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