N-type double gate MOSFET – Based for efficient digital circuits

Kenny, Tan (2024) N-type double gate MOSFET – Based for efficient digital circuits. Project Report. Melaka, Malaysia, Universiti Teknikal Malaysia Melaka. (Submitted)

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Abstract

Over the past few years, there has been a growing need for digital circuits offering high performance and energy efficiency. This has led to the investigation of new transistor designs. The Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DGMOSFET) has emerged as an up-and-coming option for enhancing device performance and minimising power usage. The main objective of this research is to concentrate on creating and improving digital circuits utilising n-type double-gate MOSFET. This project presents a thorough examination of the N-type double-gate MOSFET in the creation of efficient digital circuits. The suggested transistor configuration takes advantage of the distinctive qualities of double-gate MOSFET to augment the performance parameters of digital circuits, including speed, power consumption and area. By utilising n-type double-gate MOSFET, offer enhanced electrostatic control, eliminate short-channel effects and improved subthreshold slope compared to single-gate MOSFET. The research found that double-gate MOSFET has a 39% of power reduction and 50% faster switching activity compared to single-gate MOSFET in this project. The results and discoveries outlined in this project offer valuable knowledge to designers and researchers involved in advanced transistor technologies and the optimisation of digital circuits.

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