Lim, Thian Mee (2023) Synthesis, optical and semiconductor characterization of molybdenum diselenide (MoSe2) thin films. Project Report. Melaka, Malaysia, Universiti Teknikal Malaysia Melaka. (Submitted)
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Synthesis, optical and semiconductor characterization of molybdenum diselenide (MoSe2) thin films.pdf - Submitted Version Download (2MB) |
Abstract
Both efficient and more economical semiconductor thin film materials are of current interest which is growing day by the day, especially with the advancement of nanotechnology and polymer science. Despite the fact that silicon solar cells now dominate the PV market, thin film-based technologies have nearly equaled their performance and yet have space for improvement. The low availability of several components in current commercially accessible PV technologies, as well as the recent high cost of silicon modules, has drawn the scientific community's attention to cost-effective materials. Due to their exceptional structural, optical and electrical properties, layered transition chalcogenide materials such as Molybdenum diselenide (MoSe2) have attracted a lot of attention recently. Electrodeposition, as a well-established chemical method with intrinsic large-scale manufacturing capabilities, be used to build low-cost solar cells with direct band gaps and the ability to control the band gap through in-situ doping for the creation of possible hereojunctions. Electrochemical techniques were used to investigate the electrodeposition of Molybdenum diselenide (MoSe2) thin films on an Indium Tin Oxide (ITO) coated glass substrate. The cyclic voltammetry method was used to determine the optimal potential for MoSe2 thin deposition, and the thickness was investigated using the weight gain method. Xray diffraction (XRD) will confirm the structural characterization and crystallographic nature of these films, while scanning electron microscopy (SEM) will reveal information about their grain or molecular structures by analysing their surface morphology. A UV-Vis-NIR Spectrophotometer was used to investigate the thin films' optical characteristics. Optical absorption can be investigated to determine the band gap nature of these kind of materials. Their stoichiometric relationships will be determined by compositional analysis using Energy dispersive X-ray analysis (EDX). The semiconductor properties of these materials, such as doping density, band bending, and valence band edge, are determined using the Mott- Schottky plot. These characteristics are the deciding factors for photoelectrochemical solar cells, and they are used to determine the conversion efficiency of these materials.
Item Type: | Final Year Project (Project Report) |
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Uncontrolled Keywords: | Silicon, Molybdenum, Semiconductor, Doping, Oxide, Diffraction, Molybdenum diselenide |
Subjects: | T Technology > T Technology (General) T Technology > TP Chemical technology |
Divisions: | Library > Final Year Project > FTKMP |
Depositing User: | Norfaradilla Idayu Ab. Ghafar |
Date Deposited: | 08 Jan 2024 03:18 |
Last Modified: | 20 Nov 2024 04:53 |
URI: | http://digitalcollection.utem.edu.my/id/eprint/31273 |
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