Multi-Response Optimization In 16nm WSi2TSiO2 N-C hannel MOSFET Device Using Taguchi Method With GRA

Shamsudin, Nor Fazilah (2019) Multi-Response Optimization In 16nm WSi2TSiO2 N-C hannel MOSFET Device Using Taguchi Method With GRA. Project Report. Universiti Teknikal Malaysia Melaka, Melaka, Malaysia. (Submitted)

Text (24 Pages) Multi-Response Optimization In 16nm WSi2TSiO2 N-C hannel MOSFET Device Using Taguchi Method With GRA.pdf - Submitted Version Download (225kB)

Abstract

The aim of this research is to optimize the process parameters variations of 16nm WSi2/TiO2 n-channelMOSFET device using Taguchi-based GreyRelational Analysis (GRA). The process of the device was initially stimulated by using ATHENA module of Silvaco TCAD. The electrical characterization was carried out using an ATLAS module of Silvaco TACAD. The electrical characteristics that being calculated were threshold voltage (Vth), drive current (Ion), leakage current (Ioff), current state ratio (Ion/Ioff) and sub-threshold slope (SS). The L9 Orthogonal Array (OA) method, signal-to-noise ratio (SNR) and Analysis of Variance (ANOVA) were used to analyze the effect of the process parameters. The process parameters that used were halo implant dose, halo implant energy, S/D implant dose and S/D implant energy with noise factor which were anneal and nitride temperature. All the experimental values were converted to Grey Relational Grade (GRG) and the level of process parameter with the highest GRG are selected as the most optimal level. The values of Vth, Ion, Ioff, Ion/Ioff and SS after optimization approaches were 0.547V, 471.78 μA/μm, 3.25 pA/μm, 145.17E+06 and 76.06 mV/dec respectively. Most of the results obtained were within the range and meet the requirement of low power (LP) technology for the year 2017 as predicted by International TechnologyRoadmap Semiconductor (ITRS) 2017. As a conclusion, the design 16nm WSi2/Tio2 n-channel MOSFET device has successfully been created and through the Taguchi-based GRA, the optimal solution for the robust design of the devices has successfully been achieved.

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