Analysis Of Electrical Characteristics In Strained Si/Sige N-Channel MOSFET Device

Che Razak, Ahmad Fadzrul Nizam (2019) Analysis Of Electrical Characteristics In Strained Si/Sige N-Channel MOSFET Device. Project Report. Universiti Teknikal Malaysia Melaka, Melaka, Malaysia. (Submitted)

Text (24 Pages) Analysis of electrical characteristics in strained SiSiGe N-channel MOSFET device.pdf - Submitted Version Download (715kB)

Abstract

As scaling down MOSFET devices degraded device performance in term of leakage current and short channel effect. To overcome the problem, some significant changes in device structure and material such as Silicon Germanium (SiGe) was needed for continued transistor miniaturization and equivalent performance improvements. In this project, the performances of strained Si/SiGe n-channel MOSFET device was investigated. Simulation of this device fabrication is being performed by using ATHENA module. Meanwhile the simulation of electrical characteristics is being implemented by using ATLAS module from Semiconductor TCAD tools. Semiconductor TCAD tools are computer programs which allow for the creation, fabrication, and simulation of semiconductor devices. For this device, the results showed that the drive current (Ion), leakage current (Ioff), threshold voltage (Vth) and subthreshold swing (SS) were 631.43μA/μm, 68.54pA/μm, 0.5326V and 84.41mV/dec respectively. Most of the results obtained were within the range and met the requirement of low power (LP) technology for the year 2015 as predicted by International Technology Roadmap Semiconductor (ITRS) 2013. As a conclusion, the design of n-channel Si/SiGe MOSFET device has successfully been created to obtain the low power consumption value

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