Analyse Of Process Parameter Variation In Grraphene Field-Effect Transistor (GFET) Device Using L9 OA Taguchi Method

Rusli, Nurin Irwanie (2017) Analyse Of Process Parameter Variation In Grraphene Field-Effect Transistor (GFET) Device Using L9 OA Taguchi Method. Project Report. Universiti Teknikal Malaysia Melaka, Melaka, Malaysia. (Submitted)

Text Analyse Of Process Parameter Variation In Grraphene Field-Effect Transistor (GFET) Device Using L9 OA Taguchi Method - Nurin Irwanie Rusli - 24 Pages.pdf - Submitted Version Download (444kB)

Abstract

This project is about analyse of process parameter variation in Graphene Field-Effect Transistor (GFET) device using L9 OA Taguchi Method. The simulation process is done by using Silvaco TCAD tools and the statistical modeling is analyzed by using L9 orthogonal array (OA) of Taguchi method. In this research, there are four process parameter that be investigated which halo implant dose, halo implant energy, S/D implant dose and S/D implant energy. L9 OA Taguchi method is used to analyse the process parameters and noise factor to identify the optimum value of threshold voltage (VTH), drive current (ION) and current state ratio (ION/IOFF). The aims of this project are to design GFET device by using ATHENA module, to analyze the electrical characteristics of GFET by using ATLAS module and to optimize the process parameter variation of GFET using Taguchi method. The value of threshold voltage (VTH), drive current (ION) and current state ratio (ION/IOFF) are compared with before and after optimization. In addition, the value of current state ratio (ION/IOFF) also be compared with previous research. This research is proved that the value after optimization is better than before optimization and current state ratio (ION/IOFF) of this research is higher compared to previous research.

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