Ultra Thin Body 22nm SOI N-MOSFET (The Effect Of Sidewall Spacer Oxide Thickness To The Device Performance)

Munjani, Ameen Nurzikri (2017) Ultra Thin Body 22nm SOI N-MOSFET (The Effect Of Sidewall Spacer Oxide Thickness To The Device Performance). Project Report. Universiti Teknikal Malaysia Melaka, Melaka, Malaysia. (Submitted)

Text (24 Pages) Ultra Thin Body 22nm SOI N-MOSFET (The Effect Of Sidewall Spacer Oxide Thickness To The Device Performance).pdf - Submitted Version Download (362kB)

Abstract

Currently,Ultra-Thin Body (UTB) fully depleted (FD) silicon-on-insulator (SOI) MOSFETs were of much interest because of advantageous features such as near-ideal gate swing and high drive current.This project is to investigate Ultra-Thin Body the effect of sidewall spacer oxide thickness to improve device performance.4nm,5nm, 6nm,7nm,and 8nm are the different sidewall spacer oxide thickness that has been used in this research.The differences sidewall spacer oxide thickness does have a effect in the device performance.The tools utilize is Technology Computer Aided Design (TCAD).In TCAD software ,silvaco’s deckbuild ATHENA and ATLAS were used to design the physical structure of ultra-thin body hence obtaining its characteristics.The design structure will be go through a step by step fabrication process which parameter and value are stated in International Technology Roadmap for Semiconductor (ITRS).Then I-V characteristics of the UTB can be analyse by using ATLAS to show the particular performance of current device created.

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