Characterization of polysilicon vs metal gate electrodes in 19 nm NMOS device

Suraiza, Mohd Yasin (2017) Characterization of polysilicon vs metal gate electrodes in 19 nm NMOS device. Project Report. UTeM, Melaka,Malaysia. (Submitted)

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Abstract

Polysilicon has been used as a great gate dielectric since over years ago.The need to shrinking the size of MOSFET due to the new technology today need to replace the conventional Poly-Si/Si02 device.The main reason for replacing with new dielectric technology is because of the small scale NMOS devices using polysilicon gate lead to produce a high leakage current.To overcome this problem, metal gate with several different high k materials has been introduced in this project.This thesis presents the analysis of Polysilicon versus metal gate performance and compatibility of combination using several dielectric materials.The high k materials used in this simulation are A1203,Hf02,Ti02 and Zr02.The fabrication of the devices was done by using an ATHENA simulator module while the electrical characterization of the devices was analyzed by using an ATLAS simulator module.Both of this simulator module are from SILVACO TCAD Tools.Analysis of the results found that the best combination device in producing a great performance is Tungsten Silicide with Titanium Oxide WSi02/Ti02).The WSi02/Ti02 device produced 587.69 uA/um of drive current (IoN) at 0.5345V of threshold voltage.The result of leakage current (loFF) for this device is at 1.9199 pA/um which is the lowest IoFF compared to the others.The parameter values meet the requirement predicted by the International Technology Roadmap Semiconductor(ITRS) 2013.

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