Optical and photoelectrochemical studies of tungsten disulfide (WS₂) thin films for solar panel

Ling, Hung Kit (2017) Optical and photoelectrochemical studies of tungsten disulfide (WS₂) thin films for solar panel. Project Report. Universiti Teknikal Malaysia Melaka, Melaka, Malaysia. (Submitted)

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Abstract

Polycrystalline Tungsten Disulphide (WS2) thin films deposited on Indium Tin Oxide (ITO) coated glass substrate were prepared by electrodeposition method. Deposition times were set between 10 to 30 minutes with every 5 minutes interval. Optimum potential for WS2 thin deposition was determined by cyclic voltmmetry technique and its thickness was measured by using weight gain method. WS2 thin films were well adherent with the ITO coated glass substrate at optimum potential -0.40V with 1.23 μm at 30 minutes deposition time. Then, structural analysis by using X-ray diffraction (XRD) reveals that the films are polycrystalline with the increasing of peak intensity for thicker films and surface morphology analysis by scanning electron microscope (SEM) which shows uniform growth and well adhere of WS2 thin films with glass substrate for thicker films. However, the optical energy band gap of the WS2 thin films was measured as 1.60 eV at 10 deposition time and decreased to 1.30 eV as deposition time increased to 30 minutes. WS2 thin films was p-type semiconductor material as determined by Mott-Schottky plot based on semiconducting parameter analysis. The values of depletion width of WS2 thin films that decrease from shows good agreement with the energy band gap values obtained from optical studies as deposition time increases. All the semiconducting parameter values of WS2 thin films falls in the range as other transition metal dichalcogenides (TMDs) material’s semiconducting parameter values and this proved that WS2 thin films are capable as material for solar cell application.

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