Structural characterization of Tungsten Sulphoselenides (WSSe) thin films for semiconductor application

Tee, Kok Chen (2016) Structural characterization of Tungsten Sulphoselenides (WSSe) thin films for semiconductor application. Project Report. Universiti Teknikal Malaysia Melaka, Melaka, Malaysia. (Submitted)

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Abstract

Thin film technology is one of the most developing technologies nowadays that involve in the development of photovoltaic cell. Transition metal dichalcogenide (TMD) are semiconductors, which are also known as ternary thin film with the formula MX2 that can be used as an efficient photovoltaic material. This research intent to predict safe, non-toxic, cost- efficient and relatively convenient technique to synthesize the transition metal dichacogenides thin films. Among TMDs, tungsten supho selenide (WSSe) is the one of the promising material that can be used in the thin film technology. The objectives of this paper are to synthesize stoichiometric of ternary tungsten sulpho selenides thin film via electrodeposition method. After the thin film has been prepared, the structural characterization of tungsten sulpho selenide thin film is analyzed by changing its various deposition parameters. WSSe will be electrodeposited on Indium Tin Oxide (ITO) coated glass substrate. Structural analysis via X-ray Diffraction (XRD) will reveal the crystallography nature of the thin film. The structural information can be obtained by using monochromatic CuK radiation ( =1.5418 ) at 2 angle in the range of 10o-90o. Scanning Electron Microscope (SEM) studies will reveal the nature grain growth of the film with crystallite on the surface. Energy Dispersive X-ray Spectroscopy (EDX) analysis was used to confirm the composition of WSSe thin film. The deposition potential is expected to be in the range of -2.0V to 2.0V whereas the thickness of the film is expected to be in the range of 0.6 -1.0 .

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