Electrical Characteristics Of High-K Dielectrics For The 19NM Gate Length NMOS Device

Mohd Sabri, Nur Fatin (2016) Electrical Characteristics Of High-K Dielectrics For The 19NM Gate Length NMOS Device. Project Report. UTeM, Melaka, Malaysia. (Submitted)

Text (24 Pages) Electrical Characteristics Of High-K Dielectrics For The 19NM Gate Length NMOS Device.pdf - Submitted Version Download (1MB)

Abstract

Aggressive scaling of n-channel metal oxide semiconductor (NMOS) device will increase the transistor density and performance. However, continual gate oxide scaling will require high-k gate dielectric, since the leakage current (IOFF) is increasing with reducing physical thickness of gate oxide (SiO2). In this project, the effect of high-k dielectrics for electrical characteristic in 19nm NMOS device were investigated. The two electrical characteristics that were considered are threshold voltage (VTH) and IOFF.The device was virtual fabricated by using the ATHENA simulation module while the electrical characteristic response was stimulated using ATLAS module. The performance of Titanium Oxide (TiO2) and Hafnium Oxide (HfO2) as high-k dielectric materials with different metal gates such as Tungsten Silicides (WSix) and Titanium Silicides (TiSix) have been made. As conclusion, the TiO2 has been recognized to be the most suitable high-k dielectric material for metal gate, WSix. This is because TiO2/WSix device has the lowest leakage current (1.92pA/μm) and the highest drive current (578.8μA/μm) if compare with other devices include SiO2/Poly device. The result obtained are well within International Technology Roadmap Semiconductor (ITRS) prediction for the year 2015.Moreover, the TiO2/WSix device has an excellent power consumption due to its higher ION/IOFF ratio.

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