Design And Characterization Of 20NM SOI MOSFET Doping Abruptness Dependent

Nor Fatihah, Mohd Zain (2015) Design And Characterization Of 20NM SOI MOSFET Doping Abruptness Dependent. Project Report. UTeM, Melaka, Malaysia. (Submitted)

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Abstract

SOI MOSFET based currently becomes a trend for low power device such as palmtops, cell phone and other device due to increment of speed, density and circuit performance. Various efforts have been done to continue device shrinking dimensions and higher-frequency performance will be driven by market application. Reduction of SOI MOSFET dimension will lead to power reduction, reduce body effect, reduce parasitic capacitance and increase the density of chips. The internal resistance of the device is one of the factors that affect the device performance. Internal resistance can be controlled by choosing suitable doping abruptness of the device. In this project, I will focus on the doping abruptness of source/drain of the SOI MOSFET. The doping abruptness will varied to find the best of doping profile since the device is shrieked. In order to vary the doping abruptness of source/drain, there are several problems encountered, such as increasing of the internal resistance, threshold voltage, subthreshold slope. The purpose of this project is to design the SOI MOSFET with an ideal doping abruptness and to investigate the impact on threshold voltage, drain current and sub-threshold slope due to the variation of the doping abruptness of source/drain of SOI MOSFET. This project will be designed by using Silvaco Athena and Silvaco Atlas. Silvaco Athena is used to simulate the device structure and Silvaco Atlas to obtain the device characteristic of the SOI MOSFET. This whole project will be implemented on 20nm of gate length of SOI MOSFET doping abruptness dependent.

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