Characterization And Optimization Of Planar Power MOSFET Device

Siti Rasyiqah, Rosli (2015) Characterization And Optimization Of Planar Power MOSFET Device. Project Report. UTeM, Melaka, Malaysia. (Submitted)

Text (24 Pages) Characterization And Optimization Of Planar Power MOSFET Device.pdf - Submitted Version Download (530kB)

Abstract

Electronic world nowadays demands devices to function at their optimum performance. Power MOSFET is a device which can offer to fulfil the demand. Power MOSFET is well known for their low gate driver power, fast switching speed, and superior paralleling capability. In this project, we analyze the electrical characteristics of Planar Power MOSFET and do the optimization approach of Planar Power MOSFET by using L9 Orthogonal Array in Taguchi method. The simulation of the fabrication process of Planar Power MOSFET is performed by using ATHENA module. Meanwhile, the simulation of electrical characteristics process of Planar Power MOSFET is performed by using ATLAS module. Planar Power MOSFET device performs best when the VTH value at 1.47901V which is within the range of standard VTH value (1V to 2V), ION value at 62.3916μA/μm, IOFF value at 0.5138pA/μm and SS values at 102.61mV/decade. From the electrical characteristics values obtained, RON value calculated is 160.277kΩ and ION/IOFF value calculated is 121.3417x106. The extracted and calculated electrical characteristics values are all within the range which suggested by Taguchi method. This shows that Taguchi method can predict the optimum solution of fabrication for a good performance of Planar Power MOSFET.

Actions (login required)

View Item