The Impact Of Silicon Body Thickness On Device Performance Of 18nm Low Power Silicon On Insulator

Nurezzaty, Jamaluddin (2015) The Impact Of Silicon Body Thickness On Device Performance Of 18nm Low Power Silicon On Insulator. Project Report. UTeM, Melaka, Malaysia. (Submitted)

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Abstract

Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is type of transistor that used for switching and amplifying electronic signals. Year by year, MOSFET continuously been shrinking down in size in order to fulfil the market demand but this downsizing of MOSFET is come to the end due to many problems occur. Silicon on Insulator (SOI) is being introduced to overcome the problem in bulk MOSFET such as short channel effect. This project aimed to study the impact of silicon body thickness on device performance SOI for low power application. The studies will include the analysis of electrical characteristic of device which is threshold voltage, current leakage and subthreshold slope. Body thickness plays an important role to produce a good device performance where it has high potential solution to the ultimate scaling of SOI MOSFET. Designs parameters use in this project are from International Technology Roadmap Semiconductor (ITRS) 2011 edition. In order to design, SILVACO software using ATHENA and ATLAS are used. ATHENA is used to design the structure of device by following the parameter set in the ITRS while ATLAS used to obtain the electrical characteristic of device. The impact of this project can be clearly analysed by electrical characteristic for five different thickness of silicon body which used 18nm gate length for all design. In order to achieve the target performance some trade off occurs such as large leakage current.

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