Gate Leakage In Low Standby Power Of 18nm Gate Length MOSFET

Noorfaridah, Abdullah (2015) Gate Leakage In Low Standby Power Of 18nm Gate Length MOSFET. Project Report. UTeM, Melaka, Malaysia. (Submitted)

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Abstract

The semiconductor devices are classified into three categories according to the performance which are high performance, low standby power and low operating power. Leakage current is a gradual loss of energy for charging capacitor and it happen to those categories of devices. Leakage power, due to the tunneling gate current, increases aggressively with the scaling of the insulator thickness. Low Standby Power (LSTP) devices are typically designed for low power applications that put strict limits on the gate current. This thesis present about design 18nm, 20nm and 30nm of gate length N-MOSFET and investigate the impact of different gate oxide materials on threshold voltage and drive current for similar materials with different gate length and for similar gate length with different material (polysilicon and titanium nitrate). This work was to explore because for a long time, the thickness of silicon dioxide reduces accordingly. This will reduce the performance of the device due to lead current leakage. In order to realize this project, it conducts by using Silvaco software which its tool are Anthena (to simulate device structure) and Atlas (to obtain the device characteristics). The results show titanium nitrate is the best material to use due to improve the performance devices. The higher value of the gate length will improve the current leakage.

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