Fabrication Of Titanium Dioxide (TiO2) By High Temperature Oxidation Of Physical Vapour Deposition (PVD) Titanium Film

Noorfaizol, Mohamad Noor (2013) Fabrication Of Titanium Dioxide (TiO2) By High Temperature Oxidation Of Physical Vapour Deposition (PVD) Titanium Film. Project Report. UTeM, Melaka, Malaysia. (Submitted)

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Abstract

The purpose of this research is to develop a new synthesis method of titanium dioxide (TiO2) thin film coating on glass substrates for self-cleaning glasses application. There are several method use to fabricate the TiO2 thin film but the most favorable is via Physical Vapour Deposition (PVD) reactive sputtering. Due to the disadvantages in controlling the oxygen incorporation using PVD, the current work explores an alternative synthesis technique of TiO2 thin film which consisted of two steps, which are: (i) deposition of titanium (Ti) thin film via DC magnetron sputtering, and then (ii) oxidation of the Ti thin film in tube furnace (ex-situ) with 100 percent oxygen enviroment. The temperature of the oxidation were set to 200 ºC, 300 ºC and 400 °C. Oxidized Ti coated glass samples were characterized using optical microscope for microstructural observation, Secondary Electron Microscope (SEM) for surface morphology and thickness, X-Ray Diffraction (XRD) method for the stoichiometry of film, and UV-VIS spectrometry for band gap. The main observation of this study was properties of the synthesised film predominantly depended on the deposition process rather than the oxidation process. Nodular defect in form of spheres and flakes can be seen on the samples before oxidation and increasing significantly after the oxidation process. These defect also affected the intergrity of the deposited Ti film onto the glass where titanium were not shown as the main constituent based on the XRD results. Besides that, UV-VIS test shows that the samples does not have bandgap, thus indicated the oxidized film on the glass was not a semiconductor.

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