Design A UWB Amplifier Based On CSSDA For UWB Application

Asreen Anuar , Abd Aziz (2007) Design A UWB Amplifier Based On CSSDA For UWB Application. Project Report. UTeM, Melaka, Malaysia. (Submitted)

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Abstract

Ultrawideband (UWB) is a wireless technology that transmits an extremely low-power signal over a wide radio spectrum. Ultrawideband systems operate across a wide range of frequencies from 3.1 GHz to 10.6 GHz. As no carrier wave is needed, ultrawideband consumes extremely low power and a long battery life is possible. In this report, the UWB amplifier has been designed and simulated with Radio Frequency (RF) Computer Aided Design (CAD) TOOLS - the Advanced Design System 2004A (ADS 2004A) for operation frequency between 3 GHz and 10 GHz. This UWB amplifier was designed by using the Pseudomorphic High Electron Mobility Transistor (PHEMT) device, the FPD6836P70 produced by Filtronic Semiconductor UK Company. The main specifications requirement for the circuit was to get a flat gain around 15 dB± 5 dB and overall with a reflection coefficient below 10 dB. The first stage of designing the broadband amplifier is to select the type of transistor which is suitable for low noise amplifiers. After that, the biasing circuit input matching network and output matching network were designed. The simulations for the design in ADS2004A include the DC analysis and also S-parameter simulation. Optimization for the circuit was done by changing the lengths and widths values of the microstrip lines.

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