Cyclic voltammetry analysis of tungsten sulpho selenide (WSSe) thin films by electrochemical route

Lee, Wen Long (2016) Cyclic voltammetry analysis of tungsten sulpho selenide (WSSe) thin films by electrochemical route. Project Report. Universiti Teknikal Malaysia Melaka, Melaka, Malaysia. (Submitted)

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Abstract

One of the most developing technologies that involved in the development of solar cell is the thin film technology. Among the material for the thin film technology, the ternary transition metal chalcogenides (TMCs) are semiconductor which attracts the interest of researcher as the efficient photovoltaic material due to its unique properties. This research is intent to investigate safe, non-toxic, and simple method for the synthesizing of ternary transition metal chalcogenide thin films. Among the TMCs, the tungsten sulphoselenide, WSSe, is one of the TMCs that can be applied in thin film technology. The purposes of this research is to synthesize the stoichiometry WSSe thin film by electrochemical route, to determine the optimum potential for the deposition of the WSSe thin film via cyclic voltammetry analysis, to characterize the thin film that had been deposited via electrodeposition technique for its composition, surface morphological and structural properties. The deposition potential for the WSSe thin film had been determined by using cyclic voltammetry analysis. The presence of the WSSe material on the thin film had been confirmed by the X-ray Diffraction (XRD). The thickness of the thin film had been calculated using the weight gain method. From the surface morphological study by Scanning Electron Microscopy (SEM), it shown that cracking are presence on all the film as the time for the deposition is only 15 minutes. The Energy Dispersive X-Ray Spectroscopy (EDX) had shown that the ratio of W: S: Se is not in the ratio of 1:1:1. The stoichiometry of WSSe thin film is not obtained as there is presence of contaminant on the thin film surface. From the result, it had been shown that the WSSe thin film had successfully deposited on ITO coated glass substrate and aluminum substrate by using optimum potential of -0.46V and -0.78V respectively with the electrodeposition technique. The annealing is suggested for further improvement for the deposition of WSSe thin film.

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