Nur Yashidar , Mohamad Yasin (2012) The Design And Analysis Of CMOS Pin-Photodiode For Opto-Fluidic Detector. Project Report. UTeM, Melaka, Malaysia. (Submitted)
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Abstract
This paper is about to design and analyzes PIN Photodiode. The PIN Photodiode was design and analysis in by using Silvaco TCAD Tools. The width of intrinsic layer had been varied with two different values which are 2.4mμ x 8mμ and 2mμ x 8mμ. The size of intrinsic layer will affect the depletion region of each Photodiode. To see the difference, the IV characteristics for each photodiode have been analyzed and the results show that each of PIN photodiode with a different active area gives different IV characteristics.
| Item Type: | Final Year Project (Project Report) |
|---|---|
| Uncontrolled Keywords: | Photodiodes |
| Subjects: | T Technology > T Technology (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Library > Final Year Project > FKEKK |
| Depositing User: | Rohana Hashim |
| Date Deposited: | 05 Jul 2013 07:19 |
| Last Modified: | 28 May 2015 03:57 |
| URI: | http://digitalcollection.utem.edu.my/id/eprint/8576 |
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