Design Of Low Noise Amplifier For Ultrawide Band Application

Raja Ahmad Kamil , Raja Yacob (2009) Design Of Low Noise Amplifier For Ultrawide Band Application. Project Report. UTeM, Melaka, Malaysia. (Submitted)

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Abstract

Over the years, wireless communication becomes most important communication type in the world because of its ability to evolve. Low Noise Amplifier (LNA) is located at front end of receiver system, which makes it one of the important parts to retrieve signals. Federal Communication Commission has licensing on the use of Ultra Wide Band (UWB) frequency (ranging from 3.1 GHz to 10.6 GHz) due to its benefits that are transmits information using very low power, short impulses thinly spreading over a wide bandwidth, high data rate and less multipath fading [1]. From statement above, this project is to design a LNA that will work on UWB spectrum using transistor pHEMT Mitsubishi Semiconductor MGF4941AL in AWR Microwave Office. Beginning from a sketch, this project will show steps to design using several methods, that is; Cascaded 3-Pin-Point Amplifier, 3-Stage Balance Amplifier and 3-Stage Feedback Amplifier, and analyze the LNA designed. The LNA designed operate in UWB spectrum, Noise Figure (NF) < -3dB, constant gain > 15dB, and matched over the bandwidth. The best technique is 3-Stage Feedback Amplifier which gave S21 value as high as 39.93dB with fluctuation only 0.71dB, and NF as low as 1.647dB maximum.

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