Study of Copper(I) thiocyanate layer as hole transport material for solar cell application

Izlan, Nurhazwani (2021) Study of Copper(I) thiocyanate layer as hole transport material for solar cell application. Project Report. Universiti Teknikal Malaysia Melaka, Melaka, Malaysia. (Submitted)

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Abstract

In this study, the performance of Copper(I) Thiocyanate (CuSCN) layer as hole transport material for solar cell applications was explored using SCAPS-1D simulation software. In this project, the completed simulated device construction is made of FTO / TiO2 / N719/ CuSCN/ Ni. In orders to achieve the highest efficiency for solid-state dye-sensitized solar cell (SSDSSC) and the effect of back contact, several key parameters of hole transport layer (HTL) such as thickness, doping, working temperature, and defect interface layer were evaluated. Electron transport layer (ETL) like TiO2, ZnO and SnO2 have also been studied. The quantum efficiency was also investigated for a few parameters, instead of assessing the efficiency of the SSDSSC. The results proved that SSDSSC with back contact delivers a better performance compared to without back contact because of the low thickness of HTL. Furthermore, it can be shown that TiO2 as ETL achieved the best output efficiency of 2.56%. The simulation findings can be utilized as a guidance in the SSDSSC fabrication process with CuSCN as a hole transport layer.

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