Firhat, Ain Yasmin (2021) Design and analysis of copper (I) iodide as hole transport layer for solid-state dye-sensitized solar cell. Project Report. Universiti Teknikal Malaysia Melaka, Melaka, Malaysia. (Submitted)
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Design and analysis of copper (I) iodide as hole transport layer for solid-state dye-sensitized solar cell.pdf - Submitted Version Download (3MB) |
Abstract
In this work, the performance of solid-state dye-sensitized solar cell (SSDSSC) with Copper (I) Iodide as a hole transport layer was investigated using SCAPS -1D simulation software. The complete simulated device structures in this project are composed of FTO/TiO2/N719/CuI/Ni. Several key parameters of HTL have been analysed to obtain the highest efficiency for SSDSSC as well as the influence of back contact. The incorporation of ETL such as TiO2, ZnO, and SnO2 also was studied. Instead of analysing the eff iciency of the SSDSSC, the recombination rate and quantum efficiency also were analysed for a few parameters. The results have proven that SSDSSC with back contact yields a better performance due to the low thickness of HTL compared to without back contact. In addition, it can also be proved that TiO2 as ETL obtained the best efficiency of 5.6%. The simulation results can be used as a guide in the fabrication process for SSDSSC employing CuI as a hole transport layer.
Item Type: | Final Year Project (Project Report) |
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Uncontrolled Keywords: | SSDSSC, CuI hole transport layer, SCAPS-1D simulation, Efficiency, TiO2 ETL |
Subjects: | T Technology > T Technology (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering |
Divisions: | Library > Final Year Project > FKEKK |
Depositing User: | Sabariah Ismail |
Date Deposited: | 07 Apr 2025 05:45 |
Last Modified: | 07 Apr 2025 05:45 |
URI: | http://digitalcollection.utem.edu.my/id/eprint/35400 |
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