Intermetallic compound at copper wire- aluminum bond Pad interface in thermosonic wire bonding

Ratha, Sivapriya (2023) Intermetallic compound at copper wire- aluminum bond Pad interface in thermosonic wire bonding. Project Report. Melaka, Malaysia, Universiti Teknikal Malaysia Melaka. (Submitted)

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Abstract

The main objective of this research is to study the Intermetallic Compound at the Copper Wire – Aluminum Bond Pad Interface in Thermosonic Wire Bonding. In Semiconductor /Electronic industry the Au-Al intermetallic replaced with this Cu-Al combination due to the increasing price of Gold. While replacing the Cu-Al as wire bonding materials it is found of void formation that affects the quality of the discrete compounds. In general, excessive IMC growth in wire bonding systems will reduce bond reliability. This study provides an insight at the production of voids during the formation of Intermetallic (IMC) in the Cu wire Al pad interface. In addition, a theoretical stress model based on IMC development at the Cu wire– Al bond pad contact was developed. The specimens will be treated by High Thermal Storage (HTS) of 0, 500 and 1000 hours. Based on measurements of IMC thickness and volume change, this model was used to estimate stress generation. The effect of volume changes and thickness on stress development will result in the formation of voids. There have been a few investigations on the identification of Cu-Al IMC using different methods like as Scanning Electron Microscope (SEM) and Energy dispersive X-Ray (EDX). Basically, EDX is used as a selective technique to detect the Cu-Al IMC phase because it has high resolution and can reveal ultrafine features of material microstructure. Although, because of various constraints, the X-ray Diffraction (XRD) method was used to substitute EDX in the investigation to detect the Cu-Al IMC phase at the bonding interface. However, there are several problems to utilizing this method. As a result, this research will focus on the two sample preparation procedures, powder method and etching process. One of these two ways would be the selected method, which would determine the success of both procedures at the end of the experiment.

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