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Investigation of nickel oxide / perovskite interfacial in inverted perovskite solar cell

Chee, Chew Yee (2023) Investigation of nickel oxide / perovskite interfacial in inverted perovskite solar cell. Project Report. Universiti Teknikal Malaysia Melaka, Melaka, Malaysia. (Submitted)

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Abstract

Inverted perovskite solar cells (IPSC) have gotten a lot of interest in recent years because of their consistent operational stability, reduced hysteresis, and low fabrication procedure. Among the materials used in p-type semiconductor, NiOx is the most widely applied as the hole transport layer (HTL) because the organic HTL has poor stability and complicated doping process. However, NiOx has some drawbacks, which are low conductivity and unsatisfactory interface contact with perovskite. In this project, the work is divided into two sections. The first section was simulation of IPSC, and the second section was the deposition and characterization of NiOx/MAPbI3 layer. For the first section, the focus of this project was on simulating NiOx as HTL in IPSC using the GPVDM software. The simulated results were evaluated by extracting the important parameters such as power conversion efficiency (PCE), short circuit current density (Jsc), open circuit voltage (Voc) and fill factor on different variation of layers. A complete modelling device structure of ITO/NiOx/MAPbI3/C60/BCP/Ag was successfully simulated with better PCE, which is 18.227% compared to previous work, which is 17.57%. For the second section, the project was focused to characterize the NiOx/MAPbI3, which is synthesized by sol-gel method. Then, the deposited layers were characterized by UV-Vis, SEM and XRD.It was found that the annealed NiOx/MAPbI3 has improved the performance and stability, resulting in a good stability compared with non-anneal NiOx/MAPbI3. From these findings, the ITO/NiOx/MAPbI3/C60/BCP/Ag in IPSC has a potential for the development of IPSC with higher PCE.

Item Type: Final Year Project (Project Report)
Uncontrolled Keywords: Layers, Layer, Stability, Open circuit voltage, Conductivity, P-type semiconductor, Section, Short circuit current density
Subjects: T Technology > T Technology (General)
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Library > Final Year Project > FKEKK
Depositing User: Norfaradilla Idayu Ab. Ghafar
Date Deposited: 16 Nov 2023 03:27
Last Modified: 16 Nov 2023 03:27
URI: http://digitalcollection.utem.edu.my/id/eprint/30368

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