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The Effect Of Copper (Cu) Electroplating Parameters On Copper Vertical Interconnect Access (VIA) Filling For Printed Circuit Board (PCB)

Yuza, Nor Aqilah (2019) The Effect Of Copper (Cu) Electroplating Parameters On Copper Vertical Interconnect Access (VIA) Filling For Printed Circuit Board (PCB). Project Report. UTeM, Melaka, Malaysia. (Submitted)

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The Effect Of Copper (Cu) Electroplating Parameters On Copper Vertical Interconnect Access (VIA) Filling For Printed Circuit Board (PCB).pdf - Submitted Version
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Abstract

Printed Circuit Board (PCB) functions to mechanically hold and connect the electronic components electrically by using conductive pathway, tracks or signal traces etched from copper sheets laminated onto non-conductive substrate. This study focusing on blind VIA holes and it was metallized by the electroplating process. In various industries, their copper (Cu) plating tanks are unique depending on the plating requirements and the product demands. For this case of plating process, the deposition rate on the PCB cathode is higher than the Cu anode dissolution hence reduces the Cu ion concentration in the plating bath. Because of the condition, it affects the deposition rate as well as the quality of the product resulting to low thickness, no plate area and so on. Thus, this project justifies on how PCB is affected if the parameters are change. The parameter that was chosen is current density and agitation. The first objective of this study is to investigate the effect of Cu plating parameters of the blind VIA filling on the PCB and determine the optimum parameters while the second objective is to characterize the surface morphology of the drilled holes PCB and determine the thickness of the Cu deposition on the PCB. The PCB that was used is doubled sided PCB with polyimide as dielectric between Cu. Hence To evaluate the Cu via filling on the PCB structure after the plating process, the characterization of the surface morphology of the blind VIA on the PCB was be done by using 3D Laser Microscope. The thickness of deposited Cu must be less than 30μm and the uses of high agitation ensure good mass transfer of the Cu to give smooth filling of the Cu in the blind VIA. Thus, from the result obtained, the optimum parameter is by using current density 2 A/dm² with high agitation.

Item Type: Final Year Project (Project Report)
Uncontrolled Keywords: Copper, Copper, Metallurgy
Subjects: T Technology > TS Manufactures
Divisions: Library > Final Year Project > FKP
Depositing User: Sabariah Ismail
Date Deposited: 04 Dec 2020 07:56
Last Modified: 04 Dec 2020 07:56
URI: http://digitalcollection.utem.edu.my/id/eprint/24867

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