Novel Architecture 22nm Highly Scaled Fully Depleted Ultra Thin Body Silicon On Insulator (FD UTB SOI) For Low Power Application

Mohd Zain, Anis Suhaila and Haroon, Hazura and Abdul Razak, Hanim and Salehuddin, Fauziyah (2018) Novel Architecture 22nm Highly Scaled Fully Depleted Ultra Thin Body Silicon On Insulator (FD UTB SOI) For Low Power Application. Project Report. Universiti Teknikal Malaysia Melaka, Melaka, Malaysia. (Submitted)

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Abstract

The main objective of this project is to perform a comprehensive simulation study of the statistical variability in well scaled fully depleted ultra thin body silicon on insulator (FD-UTB SOI) at nanometer regime.The starting point of this study is a systematic simulation analysis based on a well-designed 32nm thin body SOI template transistor provided by the FP7 project PULLNANO. The 32nm template transistor is consistent with the International Technology Roadmap for Semiconductor (ITRS) 2009 specifications.Following the foundation work in characterizing and optimizing the template 32 nm gate length transistor,the scaling proceeds down to 22 nm,16nm and 11 nm gate lengths using typically 0.7 scaling factor in respect of the horizontal and vertical transistor dimensions.The device design process is targeted for low power applications with a careful consideration of the impacts of the design parameters choice including buried oxide thickness (TBOX),source/drain doping abruptness (σ) and spacer length (Lspa).In order to determine the values of TBOX,σ,and Lspa,it is important to analyze simulation results,carefully assessing the impact on manufacturability and to consider the corresponding trade-off between short channel effects and on-current performance.Considering the above factors,TBOX = 10nm,σ = 2nm/dec and Lspa = 7nm have been adopted as optimum values respectively.

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