Optical and photoelectrochemical studies of tungsten diselenide (WSe₂) thin films for solar panels

Kamarulbahrin, Izlin Anne Kamelia (2017) Optical and photoelectrochemical studies of tungsten diselenide (WSe₂) thin films for solar panels. Project Report. Universiti Teknikal Malaysia Melaka, Melaka, Malaysia. (Submitted)

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Abstract

Tungsten Diselenide (WSe2) is a metal dichalcogenide compound (MX2, where M = Mo, W, Sn, Ni, Cd, Zn and X = Se, S, Te) that has the potential to be used for solar cell purposes. The thin film had been grown via electrodeposition with the varying parameters of deposition time (10, 15, 20, 25, 30 minutes) and deposition potential (-1.384 V and -1.372 V). Thickness of the thin film had been calculated by the Gravimetric Weight Difference Method where an increase in deposition time is directly proportional to the thickness of the the film. The surface morphology studies via Scanning Electron Microscope (SEM) revealed irregular and pinholes on the thin film deposited. The film that had been deposited at 25 minutes show the smoothest and uniform thin film deposited on the glass substrate. Annealing at 1 hour at 300oc had been done to the thin film to reveal more prominent grains which revealed further thin film characteristics. Structural studies have revealed a hexagonal structure (a = b = 0.3297 nm and c = 1.2982 nm). The optical studies had been conducted using a UV-Visible Spectrophotometer and produced a thin film with the lowest bandgap value of 1.25eV for the thin film that had been deposited at 30 minutes. Mott-Schottky plots revealed a p-type semiconductor.

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