Design And Development Of An RF Power Harvester Operating In Subthreshold For Body Area Networks

Tan, Pei Chee (2016) Design And Development Of An RF Power Harvester Operating In Subthreshold For Body Area Networks. Project Report. UTeM, Melaka, Malaysia. (Submitted)

Text Design And Development Of An RF Power Harvester Operating In Subthreshold For Body Area Networks 24 Pages.pdf - Submitted Version Download (532kB)

Abstract

High power consumption and small battery size severely limit the operating time of devices in Body Area Network (BAN). Radio Frequency (RF) harvesting system can be one of the ways to solve this constraint. The function of the rectifier is to converts the ambient RF into direct current (DC) voltage. The Fully Gate Cross Couple (FGCC) rectifier, Self-Vth Cancellation (SVC) rectifier and Dynamic Threshold Voltage MOSFET (DTMOS) rectifier have been investigated in term of rising time and output voltage. On the other hand, Schottky diode has been considered as an attractive candidate in conventional rectifier circuit due to their low forward voltage drop and fast switching speed. However, it requires high cost due to the complex fabrication process. Thus, an efficient model of Schottky diode in an integrated circuit (IC) domain is needed. In this project, Ultra-Low Power (ULP) diode has been proposed to be implemented in IC rectifier designs. The performance of ULP diode has been compared with diode-connected MOSFET based on Dickson charge pump and Villard voltage multiplier in 130nm Silterra process technology. Then, a layout of high sensitivity RF rectifier design with the size of 313mm X 214mm which applied in BAN has been developed. Besides, a modeling and prototyping of a simple RF harvesting system have been presented. An antenna and impedance matching has been investigated. Lastly, 8 stages Dickson charge pump rectifier using diode IN5819 has been simulated, fabricated and analyzed.

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