Investigation Of Impact Ionization Of Photodiode Using The Lucky Drift Theory

Azmira, Ahmad (2015) Investigation Of Impact Ionization Of Photodiode Using The Lucky Drift Theory. Project Report. UTeM, Melaka, Malaysia. (Submitted)

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Abstract

The temperature dependence of electron and hole impact ionization in Gallium Arsenide (GAas) and Silicon has been determined from photo multiplication measurements at temperature between 20k to 300k.it is found that impact ionization is suppressed by increasing temperature because of the increase in phonon scattering. Gallium Arsenide (GAas) and Silicon (Si) are the materials were using to investigation. The C programming act as a tool to calculate and manipulate the temperature dependence of impact ionization coefficient for electrons and holes based on Lucky Drift theory. Based on the results was found and proved the calculated ionization coefficient with soft threshold energy present a much better than hard threshold energy. From the project also provide to get a best data, the various value of temperature was using. Then also used to find the temperature dependence of electron multiplication and breakdown voltage.

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