Development Of Silicon-On-Insulator (SOI) Trapezoidal Waveguide Using Anisotropic Wet Etching

Khairul Anuwar, Abu Kasim (2015) Development Of Silicon-On-Insulator (SOI) Trapezoidal Waveguide Using Anisotropic Wet Etching. Project Report. UTeM, Melaka, Malaysia. (Submitted)

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Abstract

Silicon-On-Insulator (SOI) is a unique and attractive technology for the chip making process and it also give benefit in low power, low voltage and high speed processing. This technology was introduced to the semiconductor production in year 1960 using the name of Silicon-On-Sapphire (SOS). In this project, the process of modeling, optimization and characterization of Silicon-On-Insulator using Silvaco software are proposed. The optimized silicon-On-Insulator trapezoidal waveguide components are aimed to be implemented in future photonic devices such as planar lightwave circuit. Both anisotropic wet etching and dry etching are considered to evaluate the effect of etching techniques on the waveguide structure and for this project anisotropic wet etching is used. In addition, the Taguchi methods are employed to study the influence of fabrication parameters on fabrication performance such as etch rate and waveguide structure. Four fabrication parameters are considered includes phosphorus doping concentration, boron doping concentration, phosphorus diffusion time and boron diffusion time. The study involved both N-type and P-type waveguide structure with silicon orientation of <100>. The Silicon-On-Insulator fabrication process has been done through their level process with the use of Silvaco software and the optimization of the silicon optical waveguide modulation efficiency has been analyzed with the parameters value variation.

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