Ultra-Thin Body SOI 22nm N-MOSFET (The Effect TiN Gate Thickness)

Nor Jannati, Abd Halim (2015) Ultra-Thin Body SOI 22nm N-MOSFET (The Effect TiN Gate Thickness). Project Report. UTeM, Melaka, Malaysia. (Submitted)

Text (24 Pages) Ultra-Thin Body SOI 22nm N-MOSFET (The Effect TiN Gate Thickness).pdf - Submitted Version Download (416kB)

Abstract

Currently, the demand of faster and smaller devices, need an attention to the researchers and semiconductor manufacturers make them putting a lot effort to face difficulties and challenges of improving on the performance of semiconductor devices. In other words, performance of short channel effects (SCE) in device, decreases the threshold voltage causes an, extra leakage current between the source and drain. The UTB comes to adoption of high-k/metal gate stack to improve the concept evolve to control the short channel effect with thin buried oxide (TBO). In addition, UTB SOI is very subject to the floating body effect and resulting in stability characteristic of the UTB SOI MOSFET. Technology Computer Aided Design (TCAD) tool from Silvaco’s International® able to simulate the structure that has been designed in this project. Silvaco’s DECKBUILD software used to design a structure of the MOSFET according to the steps in MOSFET fabrication process. Hence, Silvaco’s ATLAS software used to obtain its characteristics. The analysis of the characteristics and results, such as transfer characteristics (Id-Vgs), sub-threshold curves (log Id-Vgs) and output characteristics (Id-Vd) were obtained to compare the drive current, leakage current, sub-threshold voltage and sub-threshold swing with titanium gate thickness for 5nm, 10nm, 15nm, 20nm, and 25nm for 22nm gate length. The 22nm UTBSOI carefully designed requirement of ITRS has been used as the reference. Results analyzed, give better performance in lower leakage current, high drain current and lower power consumption when the thickness of the titanium are increasing.

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