Effect Of Different Doping Concentration For PN Carrier Depletion Silicon-On-Insulator (SOI) Optical Modulator

Nurhaslinda, Mustaffa Kamal (2015) Effect Of Different Doping Concentration For PN Carrier Depletion Silicon-On-Insulator (SOI) Optical Modulator. Project Report. UTeM, Melaka, Malaysia. (Submitted)

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Abstract

Recently, SOI optical modulator is one of the trending technology that is widely used due to its good performance and it is also cost effective. This project highlights the design of PN carrier depletion SOI optical modulator structure and the investigation on the effect of various doping concentration to the device. The device was designed using Atlas and Athena tool provided in Silvaco software. The parameters used to investigate the effect are the change of refractive index and the change of absorption loss. This device is operated at 1.55 μm telecommunication wavelength. The applied reverse biased voltage was -0.75 V. Five different doping concentrations were used and the higher density of doping concentration produces a higher change of refractive index. As the change of refractive index is increases, the change of absorption loss is also increasing. In this project, the device doped with 5×1020 cm-3 has the highest change of refractive index which will give a good performance to the device.

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