Effects Of Different Waveguide Widths For PIPIN Carrier Injection SOI Optical Modulator

Tengku Mahirah, Tengku Ismail (2015) Effects Of Different Waveguide Widths For PIPIN Carrier Injection SOI Optical Modulator. Project Report. UTeM, Melaka, Malaysia. (Submitted)

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Abstract

Optical modulation in photonic circuits is implemented by devices that cause direct changes in optical intensity by absorption or cause changes in the refractive index of the mateli_1i1 which can be converted to an intensity change via an interferometer or a resonant device. The development of high performance optical modulators formed in silicon is important for the technology to be viable. Silicon optical modulator performs the functions of writing electrical data to an optical data carrier is for the development rate of silicon photonics. This project uses SOI optical modulator for PIPIN carrier depletion where the waveguide width varies. The project is to propose what is the best waveguide width for the best performance of PIPIN carrier depletion SOI optical modulator. The project was designed and simulated using ATHENA and ATLAS from Silvaco at 1.55µm.The waveguide widths were varied and the changes in the parameters such as refractive index, modulation efficiency and absorption coefficient were observed. The structure consists of intrinsic region; p-type or n-type semiconductor regions with forward biased applied to the voltage. The effects of the structures with different waveguide widths were observed. The parameters observed consist of the change in refractive index (∆n), modulation efficiency (VπLπ), and absorption coefficient (∆α)Based on the results, the waveguide width of 5 micron exhibits the highest refractive index (∆n) with; 17.8583 x 10-3 cm3. This is followed by modulation efficiency(VπLπ); 0.0048 V. cm. However, the structure also has the highest absorption coefficient (∆α) of-112.7477 cm-1

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