Novel structure method for punch through current in decanano MOSFET

Ayuni Fateehah , Muda (2013) Novel structure method for punch through current in decanano MOSFET. Project Report. UTeM. (Submitted)

Text NOVEL STRUCTURE METHOD FOR REDUCING PUNCH THROUGH CURRENT IN DECANANO MOSFETS 24 pages.pdf Download (5MB)

Abstract

Currently, the demand of faster and smaller devices, the researchers and semiconductor manufacturers are putting a lot of effort to face difficulties and challenges of improving of the performance of semiconductor devices from the conventional one. One of the solutions is to apply delta doping process to the conventional devices so that the punch through current is reduced and the devices performances are improved. In order to increase the mobility and the speed of the electronic devices, semiconductor technology researcher face the limitations such as punch through current in MOSFET device as it is unavoidable in scaling. The aim of this project is to reduce the punch through current in decanano MOSFET through delta doping process. Delta doping process is adding the Galium Arsenide (GaAs) in at the middle of junction depth to avoid depletion layer occurs. Technology Computer Aided Design (TCAD) tool from Silvaco's International® was to simulate the structure designed in this project. Silvaco's DevEdit software will be used to design a structure of MOSFET according to the steps, then, Silvaco's ATLAS software used to obtain its characteristics. The characteristics and result analysis such as transfer characteristics (ldV gs), sub threshold curves (log ld-V gs) and output characteristics (Id-V d) were obtain to compare the punch through current before delta doping and after delta doping process by adding the GaAS. Results analyzed in reducing punch through current in MOSFET give better performance in leakage current, speed and power consumption.

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