Design Of Silicon Phase Modulator Based On P-I-N Diode Structure

Zul Atfyi Fauzan , Mohammed Napiah and Afifah Maheran , Abdul Hamid and Mardiana , Bidin and Hazura , Haroon and Muzalifah , Mohd Said and Muhammad Idzdihar , Idris (2011) Design Of Silicon Phase Modulator Based On P-I-N Diode Structure. Project Report. UTeM, Melaka, Malaysia. (Submitted)

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Abstract

This research highlights study of carrier dispersion effect on silicon waveguide with p-i-n diode structure. The device performance is predicted by using 2D Silvaco CAD software under different applied voltages. This report investigates on three aspects which are effective refractive index variations of the device in forward and reverse biased, performance modulation efficiency and free carrier absorption loss. The phase modulator device has less sensitivity to the effective refractive index changes when operating in reverse biased or depletion mode compared to the forward biased or injection mode. Both designs prove that working at wavelength 1.55 ~m is suggested to have a device with better phase modulation efficiency and less free carrier absorption loss. Structure-wise, n-p-n structure is more efficient with VnLn 0.8 Vern but suffers more absorption loss with 0.03452082 dB/em. The modulation efficiency for p-i-n structure is less with 1.2 Vern but experiences less absorption loss with 0.03373607 dB/em.

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