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Items where Author is "Abd Gani, Azizul Haqeem"
Group by: Item Type | No Grouping Number of items: 1. Abd Gani, Azizul Haqeem (2020) Current ratio analysis on design and modelling a 22nm NMOS device with gate structure of high-k metal gate (TiO2/ TiSix) and bilayer graphene. Project Report. Universiti Teknikal Malaysia Melaka, Melaka, Malaysia. (Submitted) |
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